53012 tkim/d0209ea tkim tc-00002127 no. a1420-1/7 http://onsemi.com semiconductor components industries, llc, 2013 september, 2013 ech8102 bipolar transistor ? 30v, ? 12a, low v ce ( sat ) , pnp single ech8 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. applications ? high-power igbt / mosfet gate drivers, dc / dc converters, lamp drivers, motor drivers features ? adoption of fbet, mbit process ? high current capacitance ? low collector-to-emitter saturation voltage ? high speed switching ? high allowable power dissipation ? halogen free compliance ? ieco is guaranteed for preventing reverse ow from the collector to the emitter speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo -30 v collector-to-emitter voltage v ces -30 v collector-to-emitter voltage v ceo -30 v emitter-to-base voltage v ebo -6 v collector current i c -12 a collector current (pulse) i cp -24 a base current i b -1.2 a collector dissipation p c when mounted on ceramic substrate (900mm 2 0.8mm) 1.6 w junction temperature tj 150 c storage temperature tstg -55 to +150 c package dimensions unit : mm (typ) 7011a-005 product & package information ? package : ech8 ? jeita, jedec : - ? minimum packing quantity : 3,000 pcs./reel packing type : tl marking electrical connection ordering number : ena1420a 1 : emitter 2 : emitter 3 : emitter 4 : base 5 : collector 6 : collector 7 : collector 8 : collector ech8 1 4 85 0.15 0 to 0.02 0.25 0.25 2.8 2.3 0.65 2.9 0.3 0.9 0.07 top view bottom view 8765 1234 tl ECH8102-TL-H gb lot no.
ech8102 no. a1420-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb = -30v, i e =0a -0.1 a emitter cutoff current i ebo v eb = -4v, i c =0a -0.1 a emitter cutoff current i eco v ec = -4.5v, i c =0a -1 a dc current gain h fe 1v ce = -2v, i c = -500ma 200 560 h fe 2v ce = -2v, i c = -4a 150 h fe 3v ce = -2v, i c = -10a 100 gain-bandwidth product f t v ce = -10v, i c = -500ma 140 mhz output capacitance cob v cb = -10v, f=1mhz 120 pf collector-to-emitter saturation voltage v ce (sat)1 i c = -6a, i b = -300ma -80 -135 mv v ce (sat)2 i c = -2a, i b = -40ma -50 -85 mv base-to-emitter saturation voltage v be (sat) i c = -2a, i b = -40ma -0.85 -1.2 v collector-to-base breakdown voltage v (br)cbo i c = -10 a, i e =0a -30 v collector-to-emitter breakdown voltage v (br)ces i c = -100 a, r be =0 -30 v v (br)ceo i c = -1ma, r be = -30 v emitter-to-base breakdown voltage v (br)ebo i e = -10 a, i c =0a -6 v turn-on time t on see speci ed test circuit. 91 ns storage time t stg 125 ns fall time t f 17 ns switching time test circuit ordering information device package shipping memo ECH8102-TL-H ech8 3,000pcs./reel pb free and halogen free v r r b v cc = --12v v be =5v + + 50 input v out r l 100 f 470 f pw=20 s i b1 d.c. 1% i b2 i c = --50i b1 =25i b2 = --5a
ech8102 no. a1420-3/7 v ce = --2v ta=75 c 25 c --25 c --12 -- 6 -- 8 --10 -- 2 -- 4 0 0 --0.2 --0.4 --0.6 --0.8 --1.2 --1.0 it14433 i c -- v be collector current, i c -- a base-to-emitter voltage, v be -- v i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a --100ma --10 -- 6 -- 8 -- 2 -- 1 -- 4 -- 7 -- 9 -- 3 -- 5 0 0 --0.8 --1.6 --1.8 --2.0 --0.4 --1.2 --0.6 --1.4 --0.2 --1.0 i b =0ma it14456 --5ma --10ma --90ma --80ma --15ma --20ma --25ma --30ma --35ma --40ma --45ma --70ma --60ma --50ma it14435 5 2 3 57 2 3 57 --0.01 --1.0 23 57 --10 --0.1 100 10 3 2 5 7 3 2 v ce = --10v it14436 100 7 5 3 2 7 5 23 57 --1.0 --10 23 5 it14437 f=1mhz h fe -- i c dc current gain, h fe collector current, i c -- a h fe -- i c dc current gain, h fe collector current, i c -- a f t -- i c collector current, i c -- a gain-bandwidth product, f t -- mhz cob -- v cb collector-to-base voltage, v cb -- v output capacitance, cob -- pf ta=75 c --25 c v ce = --0.5v it14434 100 10 1000 7 2 5 3 7 2 5 3 7 --0.01 3 25 2 --0.1 7 323 5 --1.0 27 35 --10 25 c ta=75 c --25 c v ce = --2v 100 10 1000 7 2 5 3 7 2 5 3 7 --0.01 3 25 2 --0.1 7 323 5 --1.0 27 35 --10 25 c 75 c ta= --25 c 25 c --0.1 23 57 23 57 23 57 --1.0 --10 23 --0.01 --100 7 5 3 3 2 2 --10 7 5 3 2 ta=75 c 25 c --25 c it14439 i c / i b =20 v ce (sat) -- i c collector-to-emitter saturation voltage, v ce (sat) -- mv collector current, i c -- a --0.1 23 57 23 57 23 57 --1.0 --10 23 --0.01 --100 7 5 3 3 2 2 --10 7 5 3 2 --1.0 ta=75 c 75 c ta= --25 c 25 c 25 c --25 c it14438 i c / i b =10 v ce (sat) -- i c collector-to-emitter saturation voltage, v ce (sat) -- mv collector current, i c -- a
ech8102 no. a1420-4/7 --1.0 3 --0.1 ta= --25 c 75 c 3 2 7 5 2 23 57 23 57 23 57 --1.0 --10 23 --0.01 i c / i b =50 it14441 25 c base-to-emitter saturation voltage, v be (sat) -- v v be (sat) -- i c collector current, i c -- a 75 c ta= --25 c 25 c --0.1 23 57 23 57 23 57 --1.0 --10 23 --0.01 --100 7 5 3 3 2 2 --10 7 5 ta=75 c 25 c --25 c it14440 i c / i b =50 v ce (sat) -- i c collector-to-emitter saturation voltage, v ce (sat) -- mv collector current, i c -- a --0.1 7 5 3 2 7 5 3 2 7 5 3 2 5 3 2 --1.0 --10 --0.01 --0.01 --0.1 25 35 72 --1.0 5 37 2 --10 5 37 23 i c = --12a 10ms 1ms 100ms dc operation (ta=25 c) i cp = --24a 10 s it14442 100 s 500 s 0 1.8 1.6 1.0 1.2 1.4 0.8 0.6 0.4 0.2 20 060 40 80 100 140 120 160 it14443 a s o collector-to-emitter voltage, v ce -- v collector current, i c -- a collector dissipation, p c -- w p c -- ta ambient temperature, ta -- c when mounted on ceramic substrate (900mm 2 0.8mm) ta=25 c single pulse when mounted on ceramic substrate (900mm 2 0.8mm)
ech8102 no. a1420-5/7 embossed taping speci cation ECH8102-TL-H
ech8102 no. a1420-6/7 outline drawing land pattern example ECH8102-TL-H mass (g) unit 0.02 * for reference mm unit: mm 0.4 0.6 2.8 0.65
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